RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3200C14-8GTZ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
G Skill Intl F4-3200C14-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-8GTZ 8GB
Report a bug
Faster reading speed, GB/s
17.9
13.4
Average value in the tests
Faster write speed, GB/s
15.3
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
13.4
17.9
Write speed, GB/s
9.0
15.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
3567
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F4-3200C14-8GTZ 8GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3200C14-8GTZ 8GB
Samsung M471B1G73DB0-YK0 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-8GTZB 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3866C18-4GVK 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Kingston 99U5474-028.A00LF 4GB
Samsung M378A1K43DB2-CTD 8GB
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3600C19-16GTRG 16GB
Kingston 99U5471-030.A00LF 8GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Samsung M471B5273EB0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Report a bug
×
Bug description
Source link