RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology CT8G4DFS6266.M4FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Crucial Technology CT8G4DFS6266.M4FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Crucial Technology CT8G4DFS6266.M4FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
62
Around -121% lower latency
Faster reading speed, GB/s
17.3
7.4
Average value in the tests
Faster write speed, GB/s
13.4
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
28
Read speed, GB/s
7.4
17.3
Write speed, GB/s
5.9
13.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1612
3325
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4400C19-32GTRS 32GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Netac Technology Co Ltd E40832A 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905663-016.A00G 16GB
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CM4X8GE3000C15K4 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Samsung M471B5673FH0-CF8 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Corsair CML16GX3M2A1600C10 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Report a bug
×
Bug description
Source link