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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
46
62
Around -35% lower latency
Faster reading speed, GB/s
11
7.4
Average value in the tests
Faster write speed, GB/s
9.1
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
46
Read speed, GB/s
7.4
11.0
Write speed, GB/s
5.9
9.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
2396
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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