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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3200C14-16GTZSK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
G Skill Intl F4-3200C14-16GTZSK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-16GTZSK 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around -8% lower latency
Faster reading speed, GB/s
19
10.9
Average value in the tests
Faster write speed, GB/s
17.1
7.1
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
26
Read speed, GB/s
10.9
19.0
Write speed, GB/s
7.1
17.1
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1668
4022
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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