RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
71
Around 61% lower latency
Reasons to consider
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Report a bug
Faster reading speed, GB/s
15.5
10.9
Average value in the tests
Faster write speed, GB/s
8.1
7.1
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
71
Read speed, GB/s
10.9
15.5
Write speed, GB/s
7.1
8.1
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1668
1922
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD16GX4M4B3300C16 4GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.D2GF2.4010B 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston KHX2400C14S4/8G 8GB
PNY Electronics PNY 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Nanya Technology M2S4G64CB8HG5N-CG 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C16-16GTZKO 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMU32GX4M4C3200C16 8GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMR64GX4M4C3200C16 16GB
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMT32GX4M2Z3200C16 16GB
Golden Empire CL5-5-5DDR2 1GB
Panram International Corporation W4N2400PS-8G 8GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMK16GX4M2K4333C19 8GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 9905702-082.A00G 8GB
Report a bug
×
Bug description
Source link