RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
18.5
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
65
Around -132% lower latency
Faster write speed, GB/s
14.4
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
28
Read speed, GB/s
3,580.8
18.5
Write speed, GB/s
1,592.0
14.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
3402
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-2800C18-8GRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
AMD AE34G1601U1 4GB
Apacer Technology 78.CAGPP.ARW0B 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2400C17-16GSXF 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston 9905471-076.A00LF 8GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Kingston KHX1600C9D3/8G 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
A-DATA Technology DDR4 2400 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
AMD R5S38G1601U2S 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KF3600C16D4/8GX 8GB
Report a bug
×
Bug description
Source link