RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2800C16-8GRR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-2800C16-8GRR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-2800C16-8GRR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
18.6
Average value in the tests
Reasons to consider
G Skill Intl F4-2800C16-8GRR 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
65
Around -150% lower latency
Faster write speed, GB/s
13.9
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2800C16-8GRR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
26
Read speed, GB/s
3,580.8
18.6
Write speed, GB/s
1,592.0
13.9
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3406
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-2800C16-8GRR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD16GX4M2B3200C16 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CMK128GX4M4D3600C18 32GB
Kingston 99U5474-013.A00LF 2GB
Samsung M393A1G43DB1-CRC 8GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905700-025.A00G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905734-059.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZSW 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston X2YH1K-MIE-NX 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Report a bug
×
Bug description
Source link