RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3733C17-4GTZ 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-3733C17-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3733C17-4GTZ 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
65
Around -110% lower latency
Faster write speed, GB/s
15.6
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
31
Read speed, GB/s
3,580.8
16.5
Write speed, GB/s
1,592.0
15.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3142
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3733C17-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3733C17-4GTZ 4GB
OCZ OCZ2SI8002G 2GB
G Skill Intl F4-4400C17-16GVK 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15-16GVR 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Kingston ACR16D3LS1KNG/4G 4GB
V-GEN D3R8GL16A8R 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M2B3000C15 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Corsair CMX8GX3M2A2000C9 4GB
Asgard VMA44UG-MEC1U2AW1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Kingston 9965433-034.A00LF 4GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Kingston KHX1866C9D3/8GX 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
Report a bug
×
Bug description
Source link