RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Heoriady M378A1K43BB2-CTD 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Heoriady M378A1K43BB2-CTD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Heoriady M378A1K43BB2-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Heoriady M378A1K43BB2-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
64
65
Around -2% lower latency
Faster write speed, GB/s
8.2
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Heoriady M378A1K43BB2-CTD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
64
Read speed, GB/s
3,580.8
17.3
Write speed, GB/s
1,592.0
8.2
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
2067
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Heoriady M378A1K43BB2-CTD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-YH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Kingston KHX3200C18D4/8G 8GB
Kingston HP24D4U7S1MBP-4 4GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology C 8GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Kingston KVR800D2N6/2G 2GB
Avant Technology J641GU49J2320NE 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Team Group Inc. Vulcan-1600 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
Samsung M393B1K70CH0-CH9 8GB
Corsair CMH16GX4M2D3600C18 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
Corsair CMK16GX4M2B3200C16 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 8ATF1G64AZ-2G3A1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Report a bug
×
Bug description
Source link