Samsung M393B2G70BH0-YH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M393B2G70BH0-YH9 16GB vs Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Overall score
star star star star star
Samsung M393B2G70BH0-YH9 16GB

Samsung M393B2G70BH0-YH9 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Differences

  • Below the latency in the PassMark tests, ns
    50 left arrow 62
    Around 19% lower latency
  • Faster reading speed, GB/s
    9.6 left arrow 7.4
    Average value in the tests
  • Faster write speed, GB/s
    7.4 left arrow 5.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-YH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    50 left arrow 62
  • Read speed, GB/s
    9.6 left arrow 7.4
  • Write speed, GB/s
    7.4 left arrow 5.9
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2082 left arrow 1612
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons