RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.7
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
65
Around -195% lower latency
Faster write speed, GB/s
13.1
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
22
Read speed, GB/s
3,580.8
17.7
Write speed, GB/s
1,592.0
13.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2666
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Kingston 99U5474-023.A00LF 4GB
AMD R744G2400U1S 4GB
Crucial Technology CT102464BA1339.M16 8GB
Samsung M393A1G43DB0-CPB 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C16-8GTRS 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2400C15-8GRB 8GB
Unifosa Corporation GU502203EP0201 1GB
SK Hynix HMA82GS6AFRFR-UH 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2133C15-16GFXR 16GB
Kingston 99U5458-008.A00LF 4GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905701-029.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X16GE2133C13K8 16GB
Unifosa Corporation GU502203EP0201 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KHYXPX-HYJ 8GB
Report a bug
×
Bug description
Source link