RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Micron Technology 8ATF1G64AZ-2G6J1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
65
Around -117% lower latency
Faster write speed, GB/s
11.0
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
30
Read speed, GB/s
3,580.8
16.7
Write speed, GB/s
1,592.0
11.0
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
2870
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64AZ-2G6J1 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
Samsung M378B5173EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Avant Technology F641GU67F9333G 8GB
Kingston K821PJ-MID 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Samsung M471B5273DH0-CK0 4GB
Essencore Limited KD4AGU88C-26N190A 16GB
Kingston 9905471-006.A01LF 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Corsair CMY16GX3M4A2133C8 4GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Report a bug
×
Bug description
Source link