RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
14.2
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Below the latency in the PassMark tests, ns
46
65
Around -41% lower latency
Faster write speed, GB/s
13.6
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
46
Read speed, GB/s
3,580.8
14.2
Write speed, GB/s
1,592.0
13.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
2717
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Avant Technology J641GU42J7240N3 8GB
SK Hynix HMT41GS6MFR8C-PB 8GB
Crucial Technology CT102464BF160B.M16 8GB
Kingston 9965525-144.A00LF 8GB
V-GEN D4H8GL26A8TS6 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2800C17-8GIS 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2800C15-4GVR 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
AMD R748G2606U2S 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9905665-021.A00G 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX2933C17S4/8G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Kingston 99U5474-022.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2133C15-4GRK 4GB
Kingston 9905471-074.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Report a bug
×
Bug description
Source link