RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Reasons to consider
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Report a bug
Faster reading speed, GB/s
20
16
Average value in the tests
Faster write speed, GB/s
16.4
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
20.0
Write speed, GB/s
12.5
16.4
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3925
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD16GX4M2B3000C15 8GB
A-DATA Technology VDQVE1B16 2GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Kingston KVT8FP-HYC 4GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Transcend Information JM2666HLB-16G 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Asgard VMA44UG-MEC1U2AW1 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston KF2666C16S4/16G 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905630-018.A00G 8GB
PNY Electronics PNY 2GB
Corsair CM4X4GF2133C15S2 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
A-DATA Technology AX4S2800316G18-B 16GB
Report a bug
×
Bug description
Source link