RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
19.6
16
Average value in the tests
Faster write speed, GB/s
17.6
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
19.6
Write speed, GB/s
12.5
17.6
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
4000
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston HP37D4U1S8ME-16XR 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMW16GX4M2C3000C15 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M474A1G43EB1-CRC 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-4000C15-8GTRG 8GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMT16GX4M2K3600C16 8GB
Report a bug
×
Bug description
Source link