RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4DFD832A.M16FJ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Reasons to consider
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Report a bug
Faster reading speed, GB/s
16.1
16
Average value in the tests
Faster write speed, GB/s
14.4
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
16.1
Write speed, GB/s
12.5
14.4
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3416
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Samsung M393A5143DB0-CPB 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3733C17-4GTZ 4GB
Kingston 9965516-430.A00G 16GB
Samsung M378A5244CB0-CRC 4GB
PNY Electronics PNY 2GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905712-035.A00G 16GB
SK Hynix HMT325U6CFR8C-H9 2GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Samsung M471B5173QH0-YK0 4GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
A-DATA Technology DQKD1A08 1GB
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
×
Bug description
Source link