RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GVR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2133C15-8GVR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2133C15-8GVR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
35
Around 31% lower latency
Faster reading speed, GB/s
16
15.7
Average value in the tests
Faster write speed, GB/s
12.5
11.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-2133C15-8GVR 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GVR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
35
Read speed, GB/s
16.0
15.7
Write speed, GB/s
12.5
11.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2845
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2133C15-8GVR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-058.A00LF 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
SK Hynix HMA82GU6MFR8N-TF 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Samsung M386B4G70DM0-CMA4 32GB
Panram International Corporation W4N2666PS-16G 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C16-8GTZN 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GR7MFR4N-UH 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Report a bug
×
Bug description
Source link