RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C17-8GVR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2400C17-8GVR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2400C17-8GVR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster reading speed, GB/s
16
15.5
Average value in the tests
Faster write speed, GB/s
12.5
9.4
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C17-8GVR 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C17-8GVR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
24
Read speed, GB/s
16.0
15.5
Write speed, GB/s
12.5
9.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2479
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2400C17-8GVR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
Kingston XCCT36-MIE 16GB
A-DATA Technology DQVE1908 512MB
Samsung M474A1G43EB1-CRC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GVR 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK16GX4M1E3200C16 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Kingston HP26D4S9S8MHF-8 8GB
Crucial Technology RM51264BA1339.16FR 4GB
G Skill Intl F4-4000C18-8GTZKW 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Kllisre 0000 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-4000C18-16GTZR 16GB
Report a bug
×
Bug description
Source link