RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2800C16-4GRK 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2800C16-4GRK 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2800C16-4GRK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.4
Average value in the tests
Faster write speed, GB/s
12.5
11.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-2800C16-4GRK 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2800C16-4GRK 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.4
Write speed, GB/s
12.5
11.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2856
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2800C16-4GRK 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Kingston 9905471-006.A00LF 4GB
Kingston 99U5643-001.A00G 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK64GX4M82800C14 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905624-010.A00G 4GB
Kingston 9905403-038.A00LF 4GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung V-GeN D4S8GL24A8 8GB
Kingston KVR533D2N4 512MB
Hewlett-Packard 7EH55AA# 8GB
Kingston 9905471-001.A01LF 2GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M1Z3600C18 16GB
Swissbit MEU25664D6BC2EP-30 2GB
SK Hynix HMA82GU6DJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Dust Leopard DDR4-2400 C17 4GB 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 99U5713-002.A00G 4GB
Report a bug
×
Bug description
Source link