RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GSXFB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-16GSXFB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GSXFB 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
18.5
16
Average value in the tests
Faster write speed, GB/s
14.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
18.5
Write speed, GB/s
12.5
14.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3392
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GSXFB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMK32GX4M4B3733C17 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-2400C16-16GRS 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Apacer Technology 78.D2GFH.4030B 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Kingston 9905403-090.A01LF 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston XJV223-MIE-NX 16GB
Report a bug
×
Bug description
Source link