RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C19-8GSXKB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3600C19-8GSXKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C19-8GSXKB 8GB
Report a bug
Faster reading speed, GB/s
18.6
16
Average value in the tests
Faster write speed, GB/s
15.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.6
Write speed, GB/s
12.5
15.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3519
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C19-8GSXKB 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Corsair CM5S16GM4800A40N2 16GB
Samsung M378A1G44AB0-CWE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
Apacer Technology 78.01G86.9H50C 1GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Samsung M4 70T2864QZ3-CF7 1GB
V-GEN D4H8GS24A8 8GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD8GX4M2B3000C15 4GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905630-025.A00G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX3200C20S4/8G 8GB
Report a bug
×
Bug description
Source link