RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C17-16GTZRB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C17-16GTZRB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C17-16GTZRB 16GB
Report a bug
Faster reading speed, GB/s
20.2
16
Average value in the tests
Faster write speed, GB/s
16.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
20.2
Write speed, GB/s
12.5
16.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3844
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C17-16GTZRB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-16GTZRB 16GB
Team Group Inc. Team-Elite-1333 4GB
Kingston KHX2400C14S4/4G 4GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited KD48GU88C-26N190A 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2400C15-8GRK 8GB
Kingston 9905471-006.A01LF 4GB
Kingston 9905734-003.A00G 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMT64GX4M4K3600C18 16GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston XJ69DF-MIE2 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M4C3466C16 8GB
Kingston K531R8-MIN 4GB
Micron Technology 9905625-004.A03LF 8GB
Report a bug
×
Bug description
Source link