RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Faster reading speed, GB/s
16
11.4
Average value in the tests
Faster write speed, GB/s
12.5
11.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
11.4
Write speed, GB/s
12.5
11.8
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2062
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston K531R8-MIN 4GB
G Skill Intl F4-3600C16-16GTRS 16GB
Kingston KN2M64-ETB 8GB
Samsung M392A4K40BM0-CRC 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3733C17-16GTZR 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Samsung M391B5673EH1-CH9 2GB
Golden Empire CL15-17-17 D4-3200 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD824A.C16FN 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2933C14-8GTZRX 8GB
Kingston KHX3200C18D4/8G 8GB
Kllisre 8GB
Report a bug
×
Bug description
Source link