RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
8.7
Average value in the tests
Faster write speed, GB/s
12.5
7.0
Average value in the tests
Reasons to consider
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
8.7
Write speed, GB/s
12.5
7.0
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1999
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK64GX4M8A2666C16 8GB
Kingston 9905403-061.A00LF 2GB
Shenzen Recadata Storage Technology 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C15-16GVK 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMD64GX4M8A2666C15 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK8GX4M1E3200C16 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston KHX3333C17D4/4GX 4GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMG32GX4M2D3600C18 16GB
Report a bug
×
Bug description
Source link