RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A1G44AB0-CWE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M471A1G44AB0-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
50
Around 52% lower latency
Faster reading speed, GB/s
16
15.3
Average value in the tests
Faster write speed, GB/s
12.5
10.9
Average value in the tests
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A1G44AB0-CWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
50
Read speed, GB/s
16.0
15.3
Write speed, GB/s
12.5
10.9
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2512
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M471A1G44AB0-CWE 8GB RAM comparisons
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1G44AB0-CWE 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965604-008.D00G 16GB
Kingston ACR16D3LS1NGG/2G 2GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2666C18-4GRS 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2800C14-16GVK 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4B16G2L2666A18K2 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD32GX4M4B2800C14 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston KF2933C17S4/32G 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2666C13D4/8GX 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4400C17-8GVK 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M4B3400C16 4GB
Report a bug
×
Bug description
Source link