RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
24
Around -26% lower latency
Faster reading speed, GB/s
18.7
16
Average value in the tests
Faster write speed, GB/s
14.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
19
Read speed, GB/s
16.0
18.7
Write speed, GB/s
12.5
14.2
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
3220
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5316G1609U2K 8GB
G Skill Intl F4-2666C15-4GRR 4GB
A-DATA Technology DDR4 2666 8GB
Corsair CM4X4GF2400C16N2 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston XWM8G1-MIE 32GB
A-DATA Technology DDR3 1600 4GB
Corsair CM4X4GD3000C16K2 4GB
AMD R538G1601U2S 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Kingston 99U5403-036.A00G 4GB
Corsair CMT32GX4M2Z3600C18 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9905701-008.A00G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CMSX16GX4M1A2400C16 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology J642GU42J7240NF 16GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMWX16GC3000C15W4 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Report a bug
×
Bug description
Source link