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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Swissbit MEN02G64D2BE2MT-25 2GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Swissbit MEN02G64D2BE2MT-25 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Swissbit MEN02G64D2BE2MT-25 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
65
Around 63% lower latency
Faster write speed, GB/s
12.5
1,604.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3% higher bandwidth
Reasons to consider
Swissbit MEN02G64D2BE2MT-25 2GB
Report a bug
Faster reading speed, GB/s
3
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Swissbit MEN02G64D2BE2MT-25 2GB
Main characteristics
Memory type
DDR4
DDR2
Latency in PassMark, ns
24
65
Read speed, GB/s
16.0
3,082.1
Write speed, GB/s
12.5
1,604.9
Memory bandwidth, mbps
19200
6400
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
2925
495
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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