RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
62
Around 58% lower latency
Faster write speed, GB/s
7.6
7.0
Average value in the tests
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
11.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
62
Read speed, GB/s
11.9
16.7
Write speed, GB/s
7.6
7.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1610
1808
Kingmax Semiconductor FLFE85F-C8KM9 2GB RAM comparisons
Samsung M378B5673EH1-CH9 2GB
Kingston KHX2400C15/8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
Corsair CMR64GX4M4C3200C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2666C18-8GFT 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3466C16-8GVR 8GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Corsair CMY8GX3M2A2666C10 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M4B3866C18 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
AMD R748G2133U2S 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Heoriady M471A1K43BB1-CRC 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
AMD R538G1601U2S-UO 8GB
Samsung M378A1K43CB2-CTD 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Kingston KHX2400C11D3/4GX 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Report a bug
×
Bug description
Source link