Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 62

左右 58% 更低的延时
更快的写入速度，GB/s

7.6 7.0

测试中的平均数值

Samsung V-GeN D4S4GL30A16TS5 4GB

需要考虑的原因
Samsung V-GeN D4S4GL30A16TS5 4GB

报告一个错误

更快的读取速度，GB/s

16.7 11.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung V-GeN D4S4GL30A16TS5 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 62
读取速度，GB/s

11.9 16.7
写入速度，GB/s

7.6 7.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1610 1808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Crucial Technology BL16G32C16U4R.M16FE1 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Maxsun MSD44G24Q0 4GB

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Corsair CM4X8GC3000C15K4 8GB

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A-DATA Technology DDR3 1600 4GB

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Corsair CMK32GX4M4A2800C16 8GB

Corsair CMK32GX4M4A2800C16 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

Samsung M378T5663QZ3-CF7 2GB

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Kingston KHX3333C17D4/4GX 4GB

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Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB