Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung M378B5673EH1-CH9 2GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Samsung M378B5673EH1-CH9 2GB

Samsung M378B5673EH1-CH9 2GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Samsung M378B5673EH1-CH9 2GB

需要考虑的原因
Samsung M378B5673EH1-CH9 2GB

报告一个错误

更快的读取速度，GB/s

13.7 11.9

测试中的平均数值
更快的写入速度，GB/s

8.5 7.6

测试中的平均数值

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung M378B5673EH1-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

26 38
读取速度，GB/s

11.9 13.7
写入速度，GB/s

7.6 8.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1610 1865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT32G4SFD832A.C16FB 32GB

PNY Electronics PNY 2GB

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Ramaxel Technology RMUA5110MB78HAF2400 8GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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G Skill Intl F4-2400C17-16GIS 16GB