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Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M378B5673EH1-CH9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung M378B5673EH1-CH9 2GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分
star star star star star
Samsung M378B5673EH1-CH9 2GB

Samsung M378B5673EH1-CH9 2GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 32% 更低的延时
Samsung M378B5673EH1-CH9 2GB 需要考虑的原因
Samsung M378B5673EH1-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.6
    测试中的平均数值

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M378B5673EH1-CH9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 38
  • 读取速度，GB/s
    11.9 left arrow 13.7
  • 写入速度，GB/s
    7.6 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1610 left arrow 1865

Kingmax Semiconductor FLFE85F-C8KM9 2GB RAM的比较

Kingston KHX2400C15/8G 8GB

Samsung M378B5673EH1-CH9 2GB RAM的比较

Kingston KP223C-ELD 2GB
Kingston 99U5471-001.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5673FH0-CF8 2GB
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G Skill Intl F4-3600C19-8GSXKB 8GB
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Kingston 9905403-134.A00LF 2GB
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内存RAM
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Samsung M391B5673FH0-CH9 2GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
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A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M378B5673EH1-CH9 2GB
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内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair CM4X16GC3000C16K8 16GB
内存RAM
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内存RAM
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
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