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Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15-4GIS 4GB

Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-2400C15-4GIS 4GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-2400C15-4GIS 4GB

G Skill Intl F4-2400C15-4GIS 4GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
G Skill Intl F4-2400C15-4GIS 4GB 需要考虑的原因
G Skill Intl F4-2400C15-4GIS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15-4GIS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    11.8 left arrow 16.4
  • 写入速度，GB/s
    7.3 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2608

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

G Skill Intl F4-2400C15-4GIS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Avexir Technologies Corporation T 4GB
Avexir Technologies Corporation T 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Corsair CMSX32GX4M2A2933C19 16GB
Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM