Samsung M393B5170FH0-CK0 4GB vs Samsung M378B1G73BH0-CH9 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Samsung M378B1G73BH0-CH9 8GB

Samsung M378B1G73BH0-CH9 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M378B1G73BH0-CH9 8GB

需要考虑的原因
Samsung M378B1G73BH0-CH9 8GB

报告一个错误

更快的读取速度，GB/s

13.4 11.8

测试中的平均数值
更快的写入速度，GB/s

7.8 7.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Samsung M378B1G73BH0-CH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 38
读取速度，GB/s

11.8 13.4
写入速度，GB/s

7.3 7.8
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2057 2242

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM2X2048-6400C5DHX 2GB

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Corsair CMR32GX4M2A2666C16 16GB

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Kingston 9905471-006.A01LF 4GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Essencore Limited KD48GU880-36A180X 8GB

Essencore Limited KD48GU880-36A180X 8GB

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V-GEN D4H16GS24A8 16GB

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G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB