A-DATA Technology ADOVE1A0834E 1GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 94

左右 -262% 更低的延时
更快的读取速度，GB/s

18.9 1

测试中的平均数值
更快的写入速度，GB/s

16.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 26
读取速度，GB/s

1,882.0 18.9
写入速度，GB/s

1,165.4 16.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

305 3866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3466C16-4GTZ 4GB

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Samsung M393B1G70BH0-YK0 8GB

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Maxsun MSD48G30M3 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Samsung M378B5273CH0-CH9 4GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB