Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2400C17-8GSXW 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

G Skill Intl F4-2400C17-8GSXW 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GSXW 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

17.8 12.8

测试中的平均数值
更快的写入速度，GB/s

13.0 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2400C17-8GSXW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

12.8 17.8
写入速度，GB/s

9.0 13.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3115

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF1G64AZ-1G6E1 8GB

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Kingston 99U5700-010.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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AMD AE34G1601U1 4GB

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SK Hynix HMA41GR7MFR8N-TFT1 8GB

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Corsair CM4X16GE2400C14K4 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology CT8G4DFRA266.C8FN 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M378T5663QZ3-CF7 2GB

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G Skill Intl F4-3000C16-16GTZN 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB