A-DATA Technology ADOVE1A0834E 1GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

総合得点

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

総合得点

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

相違点仕様コメント

相違点

A-DATA Technology ADOVE1A0834E 1GB

考慮すべき理由
A-DATA Technology ADOVE1A0834E 1GB

バグを報告する

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

考慮すべき理由
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 94

周辺 -262% 低遅延
読み出し速度の高速化、GB/s

18.9 1

テスト平均値
書き込み速度の高速化、GB/s

16.6 1,165.4

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology ADOVE1A0834E 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

94 26
読み出し速度、GB/s

1,882.0 18.9
書き込み速度、GB/秒

1,165.4 16.6
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

305 3866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB