Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung M378B5673EH1-CH9 2GB

Punteggio complessivo

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Punteggio complessivo

Samsung M378B5673EH1-CH9 2GB

Samsung M378B5673EH1-CH9 2GB

Differenze Specifiche tecniche Commenti

Differenze

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Motivi da considerare
Kingmax Semiconductor FLFE85F-C8KM9 2GB

Al di sotto della latenza nei test PassMark, ns

26 38

Intorno 32% latenza inferiore

Samsung M378B5673EH1-CH9 2GB

Motivi da considerare
Samsung M378B5673EH1-CH9 2GB

Velocità di lettura più elevata, GB/s

13.7 11.9

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.5 7.6

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung M378B5673EH1-CH9 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

26 38
Velocità di lettura, GB/s

11.9 13.7
Velocità di scrittura, GB/s

7.6 8.5
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1610 1865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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