RAM comparison Kingston ACR512X64D3S13C9G 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingston ACR512X64D3S13C9G 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Overall score

Kingston ACR512X64D3S13C9G 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Kingston ACR512X64D3S13C9G 4GB

Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Below the latency in the PassMark tests, ns

23 27

Around -17% lower latency
Faster reading speed, GB/s

18.1 11.5

Average value in the tests
Faster write speed, GB/s

15.0 8.5

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

Kingston ACR512X64D3S13C9G 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

1756 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns