RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KHX1600C9D3/4G 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Kingston KHX1600C9D3/4G 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Kingston KHX1600C9D3/4G 4GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KHX1600C9D3/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
71
Around 49% lower latency
Faster write speed, GB/s
9.7
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
14.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KHX1600C9D3/4G 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
71
Read speed, GB/s
14.5
15.6
Write speed, GB/s
9.7
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2465
1650
Kingston KHX1600C9D3/4G 4GB RAM comparisons
Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX1600C9D3/4G 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3600C16-16GTZR 16GB
Samsung M393B5270CH0-CH9 4GB
Samsung M474A4G43MB1-CTD 32GB
Kingston 9965662-016.A00G 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston KHX4800C19D4/8GX 8GB
Kingston ACR16D3LFS1KBG/2G 2GB
Corsair CMK64GX4M82800C14 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Report a bug
×
Bug description
Source link