RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KN2M64-ETB 8GB
Samsung M378A1G43EB1-CPB 8GB
Compare
Kingston KN2M64-ETB 8GB vs Samsung M378A1G43EB1-CPB 8GB
Overall score
Kingston KN2M64-ETB 8GB
Overall score
Samsung M378A1G43EB1-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KN2M64-ETB 8GB
Report a bug
Reasons to consider
Samsung M378A1G43EB1-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
47
Around -38% lower latency
Faster reading speed, GB/s
15.4
11.7
Average value in the tests
Faster write speed, GB/s
11.5
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KN2M64-ETB 8GB
Samsung M378A1G43EB1-CPB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
34
Read speed, GB/s
11.7
15.4
Write speed, GB/s
8.0
11.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2037
2763
Kingston KN2M64-ETB 8GB RAM comparisons
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
Samsung M378A1G43EB1-CPB 8GB RAM comparisons
Samsung M378A1K43BB1-CPB 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor KLDD48F-B8KW6 1GB
Samsung M378T5663DZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905665-023.A00G 4GB
Samsung M471A5143SB1-CRC 4GB
Corsair CM4X8GF2133C13K4 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 9905625-004.A03LF 8GB
Kingston KVR533D2N4 512MB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMR32GX4M4C3200C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX4266C19D4/8GX 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Samsung M393B2G70BH0-CH9 16GB
SK Hynix HMA451U6MFR8N-TF 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMT128GX4M4C3200C16 32GB
G Skill Intl F5-6400J3239G16G 16GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
Report a bug
×
Bug description
Source link