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Kingston KVR800D2N6/2G 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Kingston KVR800D2N6/2G 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Kingston KVR800D2N6/2G 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR800D2N6/2G 2GB
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Below the latency in the PassMark tests, ns
50
71
Around 30% lower latency
Faster reading speed, GB/s
5
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
1,905.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR800D2N6/2G 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
71
Read speed, GB/s
5,143.3
15.6
Write speed, GB/s
1,905.1
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
855
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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