RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-3466C16-16GTZR 16GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
G Skill Intl F4-3466C16-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3466C16-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
19
33
Around -74% lower latency
Faster reading speed, GB/s
20.7
17.8
Average value in the tests
Faster write speed, GB/s
16.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
19
Read speed, GB/s
17.8
20.7
Write speed, GB/s
12.5
16.4
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3285
3724
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3466C16-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4000C18-32GVK 32GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Kingston 9965525-018.A00LF 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMR16GX4M2F4000C19 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C16-8GIS 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GVK 8GB
Samsung M378T5663QZ3-CF7 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMW64GX4M4C3466C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-16GVKB 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Report a bug
×
Bug description
Source link