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Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung V-GeN D4S8GL32A8TL 8GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Samsung V-GeN D4S8GL32A8TL 8GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Samsung V-GeN D4S8GL32A8TL 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
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Below the latency in the PassMark tests, ns
33
64
Around 48% lower latency
Faster reading speed, GB/s
17.8
16.8
Average value in the tests
Faster write speed, GB/s
12.5
8.3
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Samsung V-GeN D4S8GL32A8TL 8GB
Report a bug
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung V-GeN D4S8GL32A8TL 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
64
Read speed, GB/s
17.8
16.8
Write speed, GB/s
12.5
8.3
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3285
2052
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung V-GeN D4S8GL32A8TL 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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