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Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M471A5143EB1-CRC 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung M471A5143EB1-CRC 4GB

Overall score
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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Overall score
star star star star star
Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

Differences Specifications Comments

Differences

Micron Technology 16JTF25664AZ-1G4F1 2GB Reasons to consider
Micron Technology 16JTF25664AZ-1G4F1 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 95
    Around 58% lower latency
  • Faster write speed, GB/s
    8.3 left arrow 7.3
    Average value in the tests
Samsung M471A5143EB1-CRC 4GB Reasons to consider
Samsung M471A5143EB1-CRC 4GB
Report a bug
  • Faster reading speed, GB/s
    15.8 left arrow 13.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M471A5143EB1-CRC 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    40 left arrow 95
  • Read speed, GB/s
    13.6 left arrow 15.8
  • Write speed, GB/s
    8.3 left arrow 7.3
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2035 left arrow 1518

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM comparisons

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Samsung M471A5143EB1-CRC 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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