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Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Faster write speed, GB/s
9.0
7.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around -12% lower latency
Faster reading speed, GB/s
14.2
12.9
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
25
Read speed, GB/s
12.9
14.2
Write speed, GB/s
9.0
7.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2112
2104
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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