RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3600C16-8GTZR 8GB
Compare
Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3600C16-8GTZR 8GB
Overall score
Micron Technology 18HTF12872AY-800F1 1GB
Overall score
G Skill Intl F4-3600C16-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
Faster reading speed, GB/s
4
19.1
Average value in the tests
Faster write speed, GB/s
2,107.0
16.9
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C16-8GTZR 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
58
Around -107% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3600C16-8GTZR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
28
Read speed, GB/s
4,025.3
19.1
Write speed, GB/s
2,107.0
16.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
670
3859
Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
G Skill Intl F4-3600C16-8GTZR 8GB RAM comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C16-16GTZRA 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C15-16GFX 16GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
Kingston HP16D3LS1KBGH/4G 4GB
Kingston 9905711-035.A00G 8GB
PNY Electronics PNY 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
AMD R5316G1609U2K 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905622-024.A00G 4GB
Kingston 9905403-515.A00LF 8GB
Kingston KHX2933C17S4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Samsung M471B5173QH0-YK0 4GB
Panram International Corporation PUD43000C154G4NJW 4GB
Report a bug
×
Bug description
Source link