RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Compare
Micron Technology 18HTF12872AY-800F1 1GB vs Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Overall score
Micron Technology 18HTF12872AY-800F1 1GB
Overall score
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
Faster reading speed, GB/s
4
20.3
Average value in the tests
Faster write speed, GB/s
2,107.0
17.3
Average value in the tests
Reasons to consider
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
58
Around -107% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
28
Read speed, GB/s
4,025.3
20.3
Write speed, GB/s
2,107.0
17.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
670
3762
Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C19-16GRS 16GB
Samsung M378B5273CH0-CH9 4GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M393A2G40DB0-CPB 16GB
Kingston 9905584-016.A00LF 4GB
Essencore Limited KD44GU480-26N160T 4GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-4200C19-4GTZ 4GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9965669-009.A00G 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4000C16-8GVK 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
A-DATA Technology VDQVE1B16 2GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMR32GX4M4C3333C16 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KVR24N17S8/4 4GB
Corsair CMY8GX3M2A2666C10 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Report a bug
×
Bug description
Source link