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Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A1G44BB0-CWE 8GB

Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M378A1G44BB0-CWE 8GB

Overall score
star star star star star
Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Overall score
star star star star star
Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

Differences Specifications Comments

Differences

Micron Technology 18HTF12872AY-800F1 1GB Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15.1
    Average value in the tests
Samsung M378A1G44BB0-CWE 8GB Reasons to consider
Samsung M378A1G44BB0-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 58
    Around -66% lower latency
  • Faster write speed, GB/s
    9.2 left arrow 2,107.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A1G44BB0-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    58 left arrow 35
  • Read speed, GB/s
    4,025.3 left arrow 15.1
  • Write speed, GB/s
    2,107.0 left arrow 9.2
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    670 left arrow 2488

Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons

Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Samsung M378A1G44BB0-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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