RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT4G4DFS8213.M8FB 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Crucial Technology CT4G4DFS8213.M8FB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
15.3
Average value in the tests
Faster write speed, GB/s
11.8
10.7
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Crucial Technology CT4G4DFS8213.M8FB 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
51
Around -113% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
24
Read speed, GB/s
15.6
15.3
Write speed, GB/s
11.8
10.7
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2353
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix HMA84GL7MMR4N-TF 32GB
Qimonda 72T128420EFA3SB2 1GB
Transcend Information TS2GLH64V4B 16GB
Samsung M471B5173DB0-YK0 4GB
Samsung M474A1G43DB0-CPB 8GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Team Group Inc. Team-Value-800 2GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905678-026.A00G 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
OCZ OCZ2V8002G 2GB
G Skill Intl F4-3600C19-16GSXK 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2666C15-8GVR 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Report a bug
×
Bug description
Source link