RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-8GTRSB 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C14-8GTRSB 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-3600C14-8GTRSB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C14-8GTRSB 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
51
Around -65% lower latency
Faster reading speed, GB/s
17.7
15.6
Average value in the tests
Faster write speed, GB/s
17.1
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-8GTRSB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
31
Read speed, GB/s
15.6
17.7
Write speed, GB/s
11.8
17.1
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3711
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C14-8GTRSB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Kingston KHX2400C15S4/4G 4GB
Corsair VSA2GSDS667C4 2GB
Corsair CMW16GX4M1Z3600C18 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
V-Color Technology Inc. TA48G30S815GK 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD128GX4M8B3200C16 16GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMSX64GX4M4A2666C18 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-4266C19-4GTZ 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
Samsung M393B1G70BH0-YK0 8GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
Report a bug
×
Bug description
Source link