RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C16-16GTZR 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-3600C16-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
51
Around -104% lower latency
Faster reading speed, GB/s
20.1
15.6
Average value in the tests
Faster write speed, GB/s
18.3
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
25
Read speed, GB/s
15.6
20.1
Write speed, GB/s
11.8
18.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
4174
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-16GTZR 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5674QH0-YK0 2GB
Kingston KHX2400C14S4/8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
Kingston 9905403-038.A00G 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3000C16-8GVRB 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Panram International Corporation W4U3200PS-16G 16GB
Samsung M378A1K43EB2-CWE 8GB
Avant Technology J641GU42J7240N3 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C15-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-16GSXWB 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GIS 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Report a bug
×
Bug description
Source link